Dislocations in GaAs induced by plastic deformation have been studied by scanning tunneling microscopy. Atomically resolved images of perfect and partial dislocations penetrating the cleaved {110} surface were obtained. A Burgers-vector analysis of the observed dislocations was performed. During observation the dislocations were found to be mobile over nm distances. No band bending was observed around the dislocation cores indicating that they are essentially electrically neutral.

• Received 28 December 1989

DOI:https://doi.org/10.1103/PhysRevLett.64.2402