Growth Dynamics of Chemical Vapor Deposition

G. S. Bales, A. C. Redfield, and A. Zangwill
Phys. Rev. Lett. 62, 776 – Published 13 February 1989
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Abstract

The morphological growth dynamics of chemical vapor deposition is studied with a model that takes account of both diffusive transport in the bulk and the kinetics of surface reactions. For the case of a fixed flux of reactant species far from the surface, we study numerically the crossover from diffusion-limited growth to surface kinetic-limited growth. In the latter case, one can qualitatively account for the morphology at early and intermediate times by use of a nonlinear growth model which takes explicit account of the destabilizing influence of the bulk phase diffusion field.

  • Received 17 October 1988

DOI:https://doi.org/10.1103/PhysRevLett.62.776

©1989 American Physical Society

Authors & Affiliations

G. S. Bales, A. C. Redfield*, and A. Zangwill

  • School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332-0430

  • *Present address: Physics Department, Williams College, Williamstown, MA 01267.

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Vol. 62, Iss. 7 — 13 February 1989

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