Abstract
X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both and Si(111)/Si examples there are features in the perpendicular-momentum-transfer dependence which are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction.
- Received 11 August 1986
DOI:https://doi.org/10.1103/PhysRevLett.57.2714
©1986 American Physical Society