Defect Reactions in GaP: (Zn,O)

R. M. Feenstra and T. C. McGill
Phys. Rev. Lett. 47, 925 – Published 28 September 1981
PDFExport Citation

Abstract

We have observed photoinduced reactions between pairs of zinc and oxygen impurities in gallium phosphide. From photoluminescence studies we find that the nearest-neighbor (Zn, O) pairs are dissociating, after which they re-form as further separated pairs. The activation energy for the dissociation is found to be 0.60±0.07 eV for the photoinduced reaction, and 2.6±0.6 eV for the purely thermal reaction. We tentatively identify the photoinduced reaction as being due to excitation of local phonon modes by nonradiative electron-hole recombination.

  • Received 6 July 1981

DOI:https://doi.org/10.1103/PhysRevLett.47.925

©1981 American Physical Society

Authors & Affiliations

R. M. Feenstra and T. C. McGill

  • California Institute of Technology, Pasadena, California 91125

References (Subscription Required)

Click to Expand
Issue

Vol. 47, Iss. 13 — 28 September 1981

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×