Abstract
The pressure variation of resistivity and optical absorption in SmTe has been studied. A continuous pressure-induced semiconductor-to-metal transition is observed, which we ascribe to the promotion of electrons from the level into the conduction band as the gap between them shrinks with pressure and finally vanishes. The gap deduced from the saturation resistivity ratio is in good agreement with the gap of 0.62 ± 0.02 eV obtained from infrared absorption data.
- Received 24 June 1970
DOI:https://doi.org/10.1103/PhysRevLett.25.368
©1970 American Physical Society