Direct Determination of Band-Gap Renormalization in the Photoexcited Monolayer MoS2

Fang Liu, Mark E. Ziffer, Kameron R. Hansen, Jue Wang, and Xiaoyang Zhu
Phys. Rev. Lett. 122, 246803 – Published 21 June 2019
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Abstract

A key feature of monolayer semiconductors, such as transition-metal dichalcogenides, is the poorly screened Coulomb potential, which leads to a large exciton binding energy (Eb) and strong renormalization of the quasiparticle band gap (Eg) by carriers. The latter has been difficult to determine due to a cancellation in changes of Eb and Eg, resulting in little change in optical transition energy at different carrier densities. Here, we quantify band-gap renormalization in macroscopic single crystal MoS2 monolayers on SiO2 using time and angle-resolved photoemission spectroscopy. At an excitation density above the Mott threshold, Eg decreases by as much as 360 meV. We compare the carrier density-dependent Eg with previous theoretical calculations and show the necessity of knowing both doping and excitation densities in quantifying the band gap.

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  • Received 19 February 2019

DOI:https://doi.org/10.1103/PhysRevLett.122.246803

© 2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Fang Liu, Mark E. Ziffer, Kameron R. Hansen, Jue Wang, and Xiaoyang Zhu*

  • Department of Chemistry, Columbia University, New York, New York 10027, USA

  • *To whom correspondence should be addressed. xyzhu@columbia.edu

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Vol. 122, Iss. 24 — 21 June 2019

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