Large-Chern-Number Quantum Anomalous Hall Effect in Thin-Film Topological Crystalline Insulators

Chen Fang, Matthew J. Gilbert, and B Andrei Bernevig
Phys. Rev. Lett. 112, 046801 – Published 27 January 2014
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Abstract

We theoretically predict that thin-film topological crystalline insulators can host various quantum anomalous Hall phases when doped by ferromagnetically ordered dopants. Any Chern number between ±4 can, in principle, be reached as a result of the interplay between (a) the induced Zeeman field, depending on the magnetic doping concentration, (b) the structural distortion, either intrinsic or induced by a piezoelectric material through the proximity effect, and (c) the thickness of the thin film. We propose a heterostructure to realize quantum anomalous Hall phases with Chern numbers that can be tuned by electric fields.

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  • Received 27 June 2013

DOI:https://doi.org/10.1103/PhysRevLett.112.046801

© 2014 American Physical Society

Authors & Affiliations

Chen Fang1,2,4, Matthew J. Gilbert3,4, and B Andrei Bernevig2

  • 1Department of Physics, University of Illinois, Urbana, Illinois 61801-3080, USA
  • 2Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
  • 3Department of Electrical and Computer Engineering, University of Illinois, Urbana, IIllinois 61801, USA
  • 4Micro and Nanotechnology Laboratory, University of Illinois, Urbana, Illinois 61801, USA

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Issue

Vol. 112, Iss. 4 — 31 January 2014

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