Direct Bell States Generation on a III-V Semiconductor Chip at Room Temperature

A. Orieux, A. Eckstein, A. Lemaître, P. Filloux, I. Favero, G. Leo, T. Coudreau, A. Keller, P. Milman, and S. Ducci
Phys. Rev. Lett. 110, 160502 – Published 18 April 2013
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Abstract

We demonstrate the direct generation of polarization-entangled photon pairs at room temperature and telecom wavelength in an AlGaAs semiconductor waveguide. The source is based on spontaneous parametric down-conversion with a counterpropagating phase-matching scheme. The quality of the two-photon state is assessed by the reconstruction of the density matrix giving a raw fidelity to a Bell state of 0.83; a theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement. Its compatibility with electrical injection, together with the high versatility of the generated two-photon state, make this source an attractive candidate for completely integrated quantum photonics devices.

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  • Received 21 December 2012

DOI:https://doi.org/10.1103/PhysRevLett.110.160502

© 2013 American Physical Society

Authors & Affiliations

A. Orieux1, A. Eckstein1, A. Lemaître2, P. Filloux1, I. Favero1, G. Leo1, T. Coudreau1, A. Keller3, P. Milman1, and S. Ducci1,*

  • 1Laboratoire Matériaux et Phénomènes Quantiques, CNRS-UMR 7162, Université Paris Diderot, Sorbonne Paris Cité, Case courrier 7021, 75205 Paris Cedex 13, France
  • 2Laboratoire de Photonique et Nanostructures, CNRS-UPR20, Route de Nozay, 91460 Marcoussis, France
  • 3Institut des Sciences Moléculaires d’Orsay, CNRS-UMR 8214, Université Paris-Sud, Bâtiment 210, 91405 Orsay Cedex, France

  • *Corresponding author. sara.ducci@univ-paris-diderot.fr

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Issue

Vol. 110, Iss. 16 — 19 April 2013

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