Abstract
We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time . We show that the rate of spin loading can be tuned by an order of magnitude by changing the amplitude of a pulsed-gate voltage, and the fraction of spin-up electrons loaded can also be controlled. This tunability arises because electron spins can be loaded through an orbital excited state. Using a theory that includes excited states of the dot and energy-dependent tunneling, we find that a global fit to the loading rate and spin-up fraction is in good agreement with the data.
- Received 3 December 2010
DOI:https://doi.org/10.1103/PhysRevLett.106.156804
© 2011 American Physical Society
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Reading a single spin in silicon
Published 11 April 2011
Demonstration of one-shot measurement of a single spin on a silicon quantum dot brings the prospect of quantum information processing one step closer.
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