Helical vortex formation in three-dimensional electrochemical systems with ion-selective membranes

Sang V. Pham, Hyuckjin Kwon, Bumjoo Kim, Jacob K. White, Geunbae Lim, and Jongyoon Han
Phys. Rev. E 93, 033114 – Published 14 March 2016

Abstract

The rate of electric-field-driven transport across ion-selective membranes can exceed the limit predicted by Nernst (the limiting current), and encouraging this “overlimiting” phenomenon can improve efficiency in many electrochemical systems. Overlimiting behavior is the result of electroconvectively induced vortex formation near membrane surfaces, a conclusion supported so far by two-dimensional (2D) theory and numerical simulation, as well as experiments. In this paper we show that the third dimension plays a critical role in overlimiting behavior. In particular, the vortex pattern in shear flow through wider channels is helical rather than planar, a surprising result first observed in three-dimensional (3D) simulation and then verified experimentally. We present a complete experimental and numerical characterization of a device exhibiting this recently discovered 3D electrokinetic instability, and show that the number of parallel helical vortices is a jump-discontinuous function of width, as is the overlimiting current and overlimiting conductance. In addition, we show that overlimiting occurs at lower fields in wider channels, because the associated helical vortices are more readily triggered than the planar vortices associated with narrow channels (effective 2D systems). These unexpected width dependencies arise in realistic electrochemical desalination systems, and have important ramifications for design optimization.

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  • Received 16 June 2015

DOI:https://doi.org/10.1103/PhysRevE.93.033114

©2016 American Physical Society

Physics Subject Headings (PhySH)

Fluid DynamicsPolymers & Soft MatterNonlinear Dynamics

Authors & Affiliations

Sang V. Pham1,2,3, Hyuckjin Kwon1,4, Bumjoo Kim1, Jacob K. White1, Geunbae Lim4, and Jongyoon Han1,2,5,*

  • 1Research Laboratory of Electronics, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 2Singapore-MIT Alliance for Research and Technology (SMART), Singapore 138602
  • 3Department of Ship Engineering and Fluid Mechanics, Hanoi University of Science and Technology, No1 DaiCoViet, Hanoi, Vietnam
  • 4Pohang Universities of Science and Technology, Pohang, Gyeoungbuk 790784, Republic of Korea
  • 5Department of Biological Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

  • *jyhan@mit.edu

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Issue

Vol. 93, Iss. 3 — March 2016

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