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Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2

Hui Li, Huan-Wen Wang, Hongtao He, Jiannong Wang, and Shun-Qing Shen
Phys. Rev. B 97, 201110(R) – Published 14 May 2018
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Abstract

Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to −68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field-dependent current along the magnetic field, which may be induced by the Berry curvature of the band structure. This observation not only reveals unusual physical phenomena in Weyl and Dirac semimetals, but also finds additional transport signatures of Weyl and Dirac fermions other than negative magnetoresistance.

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  • Received 9 March 2018
  • Revised 30 April 2018

DOI:https://doi.org/10.1103/PhysRevB.97.201110

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Hui Li1, Huan-Wen Wang2, Hongtao He3, Jiannong Wang1,*, and Shun-Qing Shen2,†

  • 1Department of Physics, the Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
  • 2Department of Physics, the University of Hong Kong, Pokfulam Road, Hong Kong, China
  • 3Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China

  • *Authors to whom correspondence and requests for materials should be addressed: phjwang@ust.hk
  • sshen@hku.hk

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Issue

Vol. 97, Iss. 20 — 15 May 2018

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