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Localized interlayer complexes in heterobilayer transition metal dichalcogenides

M. Danovich, D. A. Ruiz-Tijerina, R. J. Hunt, M. Szyniszewski, N. D. Drummond, and V. I. Fal'ko
Phys. Rev. B 97, 195452 – Published 31 May 2018

Abstract

We present theoretical results for the radiative rates and doping-dependent photoluminescence spectrum of interlayer excitonic complexes localized by donor impurities in MoSe2/WSe2 twisted heterobilayers, supported by quantum Monte Carlo calculations of binding energies and wave-function overlap integrals. For closely aligned layers, radiative decay is made possible by the momentum spread of the localized complexes' wave functions, resulting in radiative rates of a few μs1. For strongly misaligned layers, the short-range interaction between the carriers and impurity provides a finite radiative rate with a strong asymptotic twist angle dependence θ8. Finally, phonon-assisted recombination is considered, with emission of optical phonons in both layers resulting in additional, weaker emission lines, redshifted by the phonon energy.

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  • Received 16 February 2018

DOI:https://doi.org/10.1103/PhysRevB.97.195452

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

M. Danovich1, D. A. Ruiz-Tijerina1, R. J. Hunt2, M. Szyniszewski2, N. D. Drummond2, and V. I. Fal'ko1

  • 1National Graphene Institute, University of Manchester, Booth St E, Manchester M13 9PL, United Kingdom
  • 2Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom

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Issue

Vol. 97, Iss. 19 — 15 May 2018

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