The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov–de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by $\beta =28.5$ meV Å and the Rashba coefficient $\alpha$ is tuned from 75 to 53 meV Å by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.

• Received 31 March 2017
• Revised 29 August 2017

DOI:https://doi.org/10.1103/PhysRevB.96.241401