Microwave-induced resistance oscillations in a back-gated GaAs quantum well

X. Fu, Q. A. Ebner, Q. Shi, M. A. Zudov, Q. Qian, J. D. Watson, and M. J. Manfra

Phys. Rev. B 95, 235415 – Published 9 June 2017

Abstract

We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov–de Haas oscillations. This finding provides further evidence that microwave-induced resistance oscillations are sensitive to electron-electron interactions and offer a convenient and accurate way to obtain the effective mass.

Received 21 March 2017
Revised 27 April 2017

DOI:https://doi.org/10.1103/PhysRevB.95.235415

Physics Subject Headings (PhySH)

Landau levels Photoconductivity

Quantum wells

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

X. Fu¹, Q. A. Ebner¹, Q. Shi¹, M. A. Zudov^1,*, Q. Qian², J. D. Watson^2,†, and M. J. Manfra^2,3,4

¹School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA
²Department of Physics and Astronomy and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
³Station Q Purdue, Purdue University, West Lafayette, Indiana 47907, USA
⁴School of Materials Engineering and School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA

^*Corresponding author: zudov@physics.umn.edu
^†Present address: QuTech and Kavli Institute of Nanoscience, Delft Technical University, 2600 GA Delft, The Netherlands.

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Vol. 95, Iss. 23 — 15 June 2017

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