Large out-of-plane and linear in-plane magnetoresistance in layered hafnium pentatelluride

Nitesh Kumar, Chandra Shekhar, Meixiao Wang, Yulin Chen, Horst Borrmann, and Claudia Felser
Phys. Rev. B 95, 155128 – Published 17 April 2017

Abstract

The prediction of the quantum spin Hall effect in two-dimensional ZrTe5 and HfTe5 monolayers has generated considerable recent interest in these materials. In addition, Dirac points and chiral-anomaly-induced negative longitudinal magnetoresistance (MR) have been observed in ZrTe5. Herein, we study the transport behavior of HfTe5 single crystals in detail and find a large (0.9×104%) out-of-plane transverse MR, which is among the highest for layered materials reported thus far. We also encounter a large linear in-plane transverse (magnetic field c, current a) MR and discuss its possible origin. The mass anisotropy (γ=5.4 at 125 K) obtained by scaling angle-dependent MR data is consistent with the HfTe5 elliptical Fermi surface.

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  • Received 12 May 2016
  • Revised 20 December 2016

DOI:https://doi.org/10.1103/PhysRevB.95.155128

©2017 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Nitesh Kumar1,*, Chandra Shekhar1, Meixiao Wang2, Yulin Chen2,3,4, Horst Borrmann1, and Claudia Felser1

  • 1Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
  • 2School of Physical Science and Technology, ShanghaiTech University, CAS-Shanghai Science Research Center, Shanghai 200031, People's Republic of China
  • 3State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics and Collaborative Innovation Center for Quantum Matter, Tsinghua University, Beijing 100084, People's Republic of China
  • 4Physics Department, Oxford University, Oxford, OX1 3PU, United Kingdom

  • *kumar@cpfs.mpg.de

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Issue

Vol. 95, Iss. 15 — 15 April 2017

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