Phase-field modeling of chemical control of polarization stability and switching dynamics in ferroelectric thin films

Ye Cao and Sergei V. Kalinin
Phys. Rev. B 94, 235444 – Published 28 December 2016

Abstract

Phase-field simulation (PFS) has revolutionized the understanding of domain structure and switching behavior in ferroelectric thin films and ceramics. Generally, PFS is based on the solution of (a set of) Landau-Ginzburg-Devonshire equations for a defined order parameter field(s) under physical boundary conditions (BCs) of fixed potential or charge. While well matched to the interfaces in bulk materials and devices, these BCs are generally not applicable to free ferroelectric surfaces. Here, we developed a self-consistent phase-field model with BCs based on electrochemical equilibria. We chose Pb(Zr0.2Ti0.8)O3 ultrathin film consisting of (001) oriented single tetragonal domain (Pz) as a model system and systematically studied the effects of oxygen partial pressure, temperature, and surface ions on the ferroelectric state and compared it with the case of complete screening. We have further explored the polarization switching induced by the oxygen partial pressure and observed pronounced size effect induced by chemical screening. Our paper thus helps to understand the emergent phenomena in ferroelectric thin films brought about by the electrochemical ionic surface compensations.

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  • Received 19 September 2016

DOI:https://doi.org/10.1103/PhysRevB.94.235444

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Ye Cao* and Sergei V. Kalinin

  • Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

  • *caoy@ornl.gov
  • sergei2@ornl.gov

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Issue

Vol. 94, Iss. 23 — 15 December 2016

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