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Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals

M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki
Phys. Rev. B 93, 125209 – Published 15 March 2016

Abstract

We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and far-infrared active modes. We apply our model approach to monoclinic βGa2O3 single-crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and (2¯01), are investigated by generalized spectroscopic ellipsometry within infrared and far-infrared spectral regions. We determine the frequency dependence of 4 independent βGa2O3 Cartesian dielectric function tensor elements by matching large sets of experimental data using a point-by-point data inversion approach. From matching our monoclinic model to the obtained 4 dielectric function tensor components, we determine all infrared and far-infrared active transverse optic phonon modes with Au and Bu symmetry, and their eigenvectors within the monoclinic lattice. We find excellent agreement between our model results and results of density functional theory calculations. We derive and discuss the frequencies of longitudinal optical phonons in βGa2O3. We derive and report density and anisotropic mobility parameters of the free charge carriers within the tin-doped crystals. We discuss the occurrence of longitudinal phonon plasmon coupled modes in βGa2O3 and provide their frequencies and eigenvectors. We also discuss and present monoclinic dielectric constants for static electric fields and frequencies above the reststrahlen range, and we provide a generalization of the Lyddane-Sachs-Teller relation for monoclinic lattices with infrared and far-infrared active modes. We find that the generalized Lyddane-Sachs-Teller relation is fulfilled excellently for βGa2O3.

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  • Received 28 December 2015
  • Revised 18 February 2016

DOI:https://doi.org/10.1103/PhysRevB.93.125209

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

M. Schubert1,2,*, R. Korlacki1, S. Knight1, T. Hofmann1,3, S. Schöche4, V. Darakchieva3, E. Janzén3, B. Monemar3,5, D. Gogova6,7, Q.-T. Thieu5,8, R. Togashi8, H. Murakami8, Y. Kumagai8, K. Goto8,9, A. Kuramata9, S. Yamakoshi9, and M. Higashiwaki10

  • 1Department of Electrical and Computer Engineering and Center for Nanohybrid Functional Materials, University of Nebraska, Lincoln, Nebraska 68588, USA
  • 2Leibniz Institute for Polymer Research, Dresden, Germany
  • 3Department of Physics, Chemistry, and Biology, IFM, Linköping University, SE-581 83 Linköping, Sweden
  • 4J. A. Woollam Corporation, Inc.
  • 5Global Innovation Research Organization, Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
  • 6Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Sofia, Bulgaria
  • 7Leibniz Institute for Crystal Growth, Berlin, Germany
  • 8Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
  • 9Tamura Corporation, Sayama, Saitama, Japan
  • 10National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

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Issue

Vol. 93, Iss. 12 — 15 March 2016

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