Effects of interfacial roughness on phonon transport in bilayer silicon thin films

Weiyu Chen, Juekuan Yang, Zhiyong Wei, Chenhan Liu, Kedong Bi, Dongyan Xu, Deyu Li, and Yunfei Chen

Phys. Rev. B 92, 134113 – Published 29 October 2015

Abstract

We report on molecular dynamics studies of phonon (lattice vibrations) transport in bilayer silicon thin films stuck together via van der Waals interactions. Results indicate that for bilayer thin films with an atomically smooth interface, the in-plane thermal conductivity of the bilayer films is the same as that of a single layer; however, the in-plane thermal conductivity of bilayer films is higher than that of single films if roughness is introduced at the interface. These observations are explained by the effects of interfacial roughness on phonon specularity parameters for transmitted and reflected phonons.

Received 25 January 2015
Revised 22 September 2015

DOI:https://doi.org/10.1103/PhysRevB.92.134113

Authors & Affiliations

Weiyu Chen¹, Juekuan Yang^1,*, Zhiyong Wei¹, Chenhan Liu¹, Kedong Bi¹, Dongyan Xu², Deyu Li³, and Yunfei Chen^1,†

¹School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University, Nanjing, 210096, People's Republic of China
²Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR, People's Republic of China
³Department of Mechanical Engineering, Vanderbilt University, Nashville, Tennessee 37235, USA

^*yangjk@seu.edu.cn
^†yunfeichen@seu.edu.cn

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Vol. 92, Iss. 13 — 1 October 2015

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