Electronic structure of warm dense silicon dioxide

K. Engelhorn, V. Recoules, B. I. Cho, B. Barbrel, S. Mazevet, D. M. Krol, R. W. Falcone, and P. A. Heimann
Phys. Rev. B 91, 214305 – Published 17 June 2015

Abstract

The electronic structure of warm dense silicon dioxide has been investigated by x-ray absorption near-edge spectroscopy. An ultrafast optical laser pulse was used to isochorically heat a thin silicon dioxide sample, and measured spectra were compared with simulations generated by molecular dynamics and density functional theory. In comparison with the room temperature spectrum, two features were observed: a peak below the band gap and absorption within the band gap. This behavior was also observed in the simulations. From consideration of the calculated spectra, the peak below the gap is attributed to valence electrons that have been promoted to the conduction band, while absorption within the gap is attributed to broken Si-O bonds.

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  • Received 13 August 2014
  • Revised 19 May 2015

DOI:https://doi.org/10.1103/PhysRevB.91.214305

©2015 American Physical Society

Authors & Affiliations

K. Engelhorn1,2,*, V. Recoules3, B. I. Cho4, B. Barbrel5, S. Mazevet6, D. M. Krol7, R. W. Falcone1,5, and P. A. Heimann8,†

  • 1Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 2Department of Applied Science and Technology, UC Berkeley, California 94720, USA
  • 3CEA, DAM, DIF, F-91297 Arpajon, France
  • 4Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju, Korea
  • 5Department of Physics, UC Berkeley, Berkeley, California 94720, USA
  • 6LUTH, Observatoire de Paris, Paris, France
  • 7Department of Chemical Engineering and Materials Science, UC Davis, Davis, California 95616, USA
  • 8Linac Coherent Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA

  • *kce@berkeley.edu
  • paheim@slac.stanford.edu

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Issue

Vol. 91, Iss. 21 — 1 June 2015

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