Abstract
Low hole mobility currently limits the efficiency of amorphous silicon photovoltaic devices. We explore three possible phenomena contributing to this low mobility: coordination defects, self-trapping ionization displacement defects, and lattice expansion allowing for hole wave-function delocalization. Through a confluence of experimental and first-principles investigations, we demonstrate the fluidity of the relative prevalence of these defects as film stress and hydrogen content are modified, and that the mobility of a film is governed by an interplay between various defect types.
- Received 28 March 2014
- Revised 26 June 2014
DOI:https://doi.org/10.1103/PhysRevB.90.104103
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