Resonance Raman scattering under [111] uniaxial stress in the region of the <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi>E</mi></mrow><mrow><mn>1</mn></mrow></msub></mrow></math></span> gap in InAs

E. Anastassakis; Fred H. Pollak; G. W. Rubloff

doi:10.1103/PhysRevB.9.551

Resonance Raman scattering under [111] uniaxial stress in the region of the $E_{1}$ gap in InAs

E. Anastassakis, Fred H. Pollak, and G. W. Rubloff

Phys. Rev. B 9, 551 – Published 15 January 1974

Abstract

Uniaxial stress along [111] has been used to vary the different mechanisms contributing to resonance Raman scattering from allowed TO phonons in the region of the $E_{1}$ gap in InAs. The significant stress-induced splittings and changes in the resonance Raman line shape of the spectral distribution that have been observed are accounted for by a recent model based on phonon modulation of both the energy gap and wave functions. These results provide a strong confirmation of this model.

Received 14 August 1973

DOI:https://doi.org/10.1103/PhysRevB.9.551

Authors & Affiliations

E. Anastassakis^*

Department of Physics, Northeastern University, Boston, Massachusetts 02115

Fred H. Pollak^†,‡

Department of Physics, Belfer Graduate School of Science, Yeshiva University, New York, New York 10033

G. W. Rubloff^†,§

Department of Physics, Brown University, Providence, Rhode Island 02912

^*Work supported in part by the Research Corp., the Office of Naval Research, and the National Science Foundation.
^†Work supported by the National Science Foundation.
^‡On Sabbatical leave from Brown University, Providence, R. I. 02912.
^§Present address: IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y. 10598.

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Vol. 9, Iss. 2 — 15 January 1974

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