Luminescence centers in H- and D-implanted 6H SiC

Lyle Patrick and W. J. Choyke
Phys. Rev. B 9, 1997 – Published 15 February 1974
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Abstract

High-resolution studies of the photoluminescence spectra of H- and D-implanted 6H SiC show two components in each no-phonon line. The consequences of this discovery for the interpretation of the spectra are discussed.

  • Received 11 October 1973

DOI:https://doi.org/10.1103/PhysRevB.9.1997

©1974 American Physical Society

Authors & Affiliations

Lyle Patrick and W. J. Choyke

  • Westinghouse Research Laboratories, Pittsburgh, Pennsylvania 15235

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Issue

Vol. 9, Iss. 4 — 15 February 1974

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