Abstract
We investigate the angular dependence of the magnetoresistance of thin (<1 nm), metallic SrTiO quantum wells epitaxially embedded in insulating, ferrimagnetic GdTiO and insulating, antiferromagnetic SmTiO, respectively. The SrTiO quantum wells contain a high density of mobile electrons (∼). We show that the longitudinal and transverse magnetoresistance in the structures with GdTiO are consistent with anisotropic magnetoresistance, and thus indicative of induced ferromagnetism in the SrTiO, rather than a nonequilibrium proximity effect. Comparison with the structures with antiferromagnetic SmTiO shows that the properties of thin SrTiO quantum wells can be tuned to obtain magnetic states that do not exist in the bulk material.
- Received 9 July 2013
DOI:https://doi.org/10.1103/PhysRevB.88.180403
©2013 American Physical Society