Stress-induced anisotropic diffusion in alloys: Complex Si solute flow near a dislocation core in Ni

Thomas Garnier, Venkateswara R. Manga, Dallas R. Trinkle, Maylise Nastar, and Pascal Bellon
Phys. Rev. B 88, 134108 – Published 25 October 2013

Abstract

Stress introduces anisotropy in the transport coefficients in materials, affecting diffusion. Using first-principles quantum-mechanical methods for activation barriers of atomic jumps, combined with the extended self-consistent mean-field theory to compute transport coefficients with strain-reduced symmetry, we predict significant stress-induced anisotropy for Si impurity diffusion in nickel. This causes complex spatial- and temperature-dependent fluxes; as an example, the heterogenous strain field of a dislocation creates unusual flow patterns that affect mechanical and segregation behavior.

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  • Received 22 February 2013

DOI:https://doi.org/10.1103/PhysRevB.88.134108

©2013 American Physical Society

Authors & Affiliations

Thomas Garnier1,2, Venkateswara R. Manga1,3, Dallas R. Trinkle1,*, Maylise Nastar2, and Pascal Bellon1

  • 1Department of Materials Science and Engineering, University of Illinois, Urbana-Champaign, Illinois 61801, USA
  • 2CEA, DEN, Service de Recherches de Métallurgie Physique, 91 191, Gif-sur-Yvette, France
  • 3University of Arizona, Materials Science and Engineering, Tucson, Arizona 85721, USA

  • *dtrinkle@illinois.edu

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Issue

Vol. 88, Iss. 13 — 1 October 2013

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