Anomalous Raman spectra and thickness-dependent electronic properties of WSe2

H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu, and F. M. Peeters
Phys. Rev. B 87, 165409 – Published 5 April 2013

Abstract

Typical Raman spectra of transition-metal dichalcogenides (TMDs) display two prominent peaks, E2g and A1g, that are well separated from each other. We find that these modes are degenerate in bulk WSe2 yielding one single Raman peak in contrast to other TMDs. As the dimensionality is lowered, the observed peak splits in two. In contrast, our ab initio calculations predict that the degeneracy is retained even for WSe2 monolayers. Interestingly, for minuscule biaxial strain, the degeneracy is preserved, but once the crystal symmetry is broken by a small uniaxial strain, the degeneracy is lifted. Our calculated phonon dispersion for uniaxially strained WSe2 shows a good match to the measured Raman spectrum, which suggests that uniaxial strain exists in WSe2 flakes, possibly induced during the sample preparation and/or as a result of the interaction between WSe2 and the substrate. Furthermore, we find that WSe2 undergoes an indirect-to-direct band-gap transition from bulk to monolayers, which is ubiquitous for semiconducting TMDs. These results not only allow us to understand the vibrational and electronic properties of WSe2, but also point to effects of the interaction between the monolayer TMDs and the substrate on the vibrational and electronic properties.

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  • Received 13 February 2013

DOI:https://doi.org/10.1103/PhysRevB.87.165409

©2013 American Physical Society

Authors & Affiliations

H. Sahin1,*, S. Tongay2,†, S. Horzum1,3, W. Fan2, J. Zhou2, J. Li4, J. Wu2,5, and F. M. Peeters1

  • 1Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
  • 2Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
  • 3Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey
  • 4Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
  • 5Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

  • *hasan.sahin@ua.ac.be
  • tongay@berkeley.edu

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Vol. 87, Iss. 16 — 15 April 2013

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