Finite-bias conductance anomalies at a singlet-triplet crossing

Chiara Stevanato, Martin Leijnse, Karsten Flensberg, and Jens Paaske
Phys. Rev. B 86, 165427 – Published 16 October 2012

Abstract

Quantum dots and single-molecule transistors may exhibit level crossings induced by tuning external parameters such as magnetic field or gate voltage. For Coulomb blockaded devices, this shows up as an inelastic cotunneling threshold in the differential conductance, which can be tuned to zero at the crossing. Here we show that, in addition, level crossings can give rise to a nearly vertical step-edge, ridge, or even a Fano-like ridge-valley feature in the differential conductance inside the relevant Coulomb diamond. We study a gate-tunable quasidegeneracy between singlet and triplet ground states, and demonstrate how these different shapes may result from a competition between nonequilibrium occupations and weak (spin-orbit) mixing of the states. Our results are shown to be in qualitative agreement with recent transport measurements on a Mn complex [Osorio et al., Nano Lett. 10, 105 (2010)]. The effect remains entirely general and should be observable in a wide range of Coulomb blockaded devices.

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  • Received 12 July 2012

DOI:https://doi.org/10.1103/PhysRevB.86.165427

©2012 American Physical Society

Authors & Affiliations

Chiara Stevanato, Martin Leijnse, Karsten Flensberg, and Jens Paaske

  • Center for Quantum Devices, The Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark

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Issue

Vol. 86, Iss. 16 — 15 October 2012

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