Abstract
- Received 18 May 2012
DOI:https://doi.org/10.1103/PhysRevB.86.039903
©2012 American Physical Society
Erratum: First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobility [Phys. Rev. B 78, 245204 (2008)]
Decai Yu, Yu Zhang, and Feng Liu
Phys. Rev. B 86, 039903 – Published 9 July 2012
Images
Figure 2
Change of Si conduction and valence band edge as a function of biaxial strain.Reuse & Permissions