Effect of gadolinium doping on the electronic band structure of europium oxide

Juan A. Colón Santana, Joonhee M. An, Ning Wu, Kirill D. Belashchenko, Xianjie Wang, Pan Liu, Jinke Tang, Yaroslav Losovyj, I. N. Yakovkin, and P. A. Dowben

Phys. Rev. B 85, 014406 – Published 5 January 2012

Abstract

High quality films of EuO and Eu $_{0.96}$ Gd $_{0.04}$ O were grown on $p$ -type Si(100) via pulsed laser deposition. X-ray-diffraction results show that the addition of Gd changes the growth texture from [001] to [111]. Angular-resolved photoemission spectroscopy reveals electron pockets around the $X$ points in Gd-doped EuO, indicating that the band gap in EuO is indirect. Combined photoemission and inverse photoemission measurements show an apparent transition from $n$ -type to $p$ -type behavior, which is likely due to band bending near the polar (111) surface.

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Received 2 August 2011

DOI:https://doi.org/10.1103/PhysRevB.85.014406

Authors & Affiliations

Juan A. Colón Santana¹, Joonhee M. An², Ning Wu², Kirill D. Belashchenko², Xianjie Wang³, Pan Liu³, Jinke Tang³, Yaroslav Losovyj⁴, I. N. Yakovkin⁵, and P. A. Dowben²

¹Department of Electrical Engineering, W. Scott Engineering Center, North 16th Street, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0656, USA
²Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Theodore Jorgensen Hall, 855 North 16th Street, Lincoln, Nebraska 68588-0299, USA
³Department of Physics & Astronomy, University of Wyoming, Laramie, Wyoming 82071, USA
⁴Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, Louisiana 70806, USA
⁵Institute of Physics, National Academy of Sciences of Ukraine, Prospect Nauki 46, Kyiv 680028, Ukraine

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Vol. 85, Iss. 1 — 1 January 2012

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