Temperature dependence of the Raman spectrum in Ge1ySny and Ge1xySixSny alloys

Sampriti Bagchi, Christian D. Poweleit, Richard T. Beeler, John Kouvetakis, and José Menéndez
Phys. Rev. B 84, 193201 – Published 2 November 2011

Abstract

The temperature dependence of the Raman spectrum of Ge-rich Ge1ySny and Ge1xySixSny alloys has been determined in the 10- to 400-K range. The Raman line shift and width changes as a function of temperature are found to be virtually identical to those observed in bulk Ge. This result shows that the anharmonic decay process responsible for the temperature dependence is extremely robust against the alloy perturbation, so that the expected relaxation of the wave vector conservation rule does not affect the decay in any noticeable way.

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  • Received 5 July 2011

DOI:https://doi.org/10.1103/PhysRevB.84.193201

©2011 American Physical Society

Authors & Affiliations

Sampriti Bagchi1, Christian D. Poweleit1, Richard T. Beeler2, John Kouvetakis2, and José Menéndez1,*

  • 1Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA
  • 2Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, USA

  • *Corresponding author: jose.menendez@asu.edu

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Issue

Vol. 84, Iss. 19 — 15 November 2011

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