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Charged impurity scattering in bilayer graphene

Shudong Xiao, Jian-Hao Chen, Shaffique Adam, Ellen D. Williams, and Michael S. Fuhrer
Phys. Rev. B 82, 041406(R) – Published 16 July 2010
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Abstract

We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultrahigh vacuum at low temperature. Charged impurity scattering gives a conductivity which is supralinear in carrier density with a magnitude similar to single-layer graphene for the measured range of carrier densities of 24×1012cm2. Upon addition of charged impurities of concentration nimp, the minimum conductivity σmin decreases proportional to nimp1/2 while the electron and hole puddle carrier density increases proportional to nimp1/2. These results for the intentional deposition of potassium on BLG are consistent with theoretical predictions for charged impurity scattering assuming a gapless hyperbolic dispersion relation. However, our results also suggest that charged impurity scattering alone cannot explain the observed transport properties of pristine BLG on SiO2 before potassium doping.

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  • Received 8 August 2009

DOI:https://doi.org/10.1103/PhysRevB.82.041406

©2010 American Physical Society

Authors & Affiliations

Shudong Xiao1,2, Jian-Hao Chen1,2, Shaffique Adam1,3, Ellen D. Williams1,2, and Michael S. Fuhrer1,2,*

  • 1Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742, USA
  • 2Materials Research Science and Engineering Center, University of Maryland, College Park, Maryland 20742, USA
  • 3Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA

  • *mfuhrer@umd.edu

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Issue

Vol. 82, Iss. 4 — 15 July 2010

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