Thermal transport in graphene junctions and quantum dots

Yong Xu, Xiaobin Chen, Jian-Sheng Wang, Bing-Lin Gu, and Wenhui Duan
Phys. Rev. B 81, 195425 – Published 20 May 2010

Abstract

Thermal-transport properties of various graphene junctions and quantum dots with nanoscale width are systematically investigated by nonequilibrium Green’s-function method. Thermal conductance is insensitive to the detailed structure of the contact region but substantially limited by the narrowest part of the systems. Thermal-contact resistance in nanodevices carved entirely from graphene is quite low (1010m2K/W at 300 K), at least one order lower than that between graphene and other materials. Interestingly, thermal-contact resistance of double-interface junctions is just slightly higher than that of single-interface junctions, distinct from the case of electronic transport. Moreover, graphene junctions with smaller connection angles show lower thermal conductance but higher electronic conductance. The different, even opposite dependences of thermal- and electronic-transport properties on the structural characteristics may find wide applications in nanoelectronics and thermoelectricity.

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  • Received 19 January 2010

DOI:https://doi.org/10.1103/PhysRevB.81.195425

©2010 American Physical Society

Authors & Affiliations

Yong Xu1, Xiaobin Chen1, Jian-Sheng Wang2, Bing-Lin Gu1, and Wenhui Duan1,*

  • 1Center for Advanced Study and Department of Physics, Tsinghua University, Beijing 100084, People’s Republic of China
  • 2Center for Computational Science and Engineering and Department of Physics, National University of Singapore, Singapore 117542, Republic of Singapore

  • *Corresponding author; dwh@phys.tsinghua.edu.cn

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Vol. 81, Iss. 19 — 15 May 2010

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