• Editors' Suggestion
  • Rapid Communication

Role of carbon surface diffusion on the growth of epitaxial graphene on SiC

Taisuke Ohta, N. C. Bartelt, Shu Nie, Konrad Thürmer, and G. L. Kellogg
Phys. Rev. B 81, 121411(R) – Published 16 March 2010

Abstract

We have observed the formation of graphene on SiC by Si sublimation in an Ar atmosphere using low-energy electron microscopy, scanning tunneling microcopy, and atomic force microscopy. This work reveals unanticipated growth mechanisms, which depend strongly on the initial surface morphology. Carbon diffusion governs the spatial relationship between SiC decomposition and graphene growth. Isolated bilayer SiC steps generate narrow ribbons of graphene by a distinctive cooperative process, whereas triple bilayer steps allow large graphene sheets to grow by step flow. We demonstrate how graphene quality can be improved by controlling the initial surface morphology to avoid the instabilities inherent in diffusion-limited growth.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 17 February 2010

DOI:https://doi.org/10.1103/PhysRevB.81.121411

©2010 American Physical Society

Authors & Affiliations

Taisuke Ohta, N. C. Bartelt, Shu Nie, Konrad Thürmer, and G. L. Kellogg

  • Sandia National Laboratories, Albuquerque, New Mexico 87185, USA and Sandia National Laboratories, Livermore, California 94550, USA

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 81, Iss. 12 — 15 March 2010

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×