Distribution of magnetic domain pinning fields in Ga1xMnxAs ferromagnetic films

Jungtaek Kim, D. Y. Shin, Sanghoon Lee, X. Liu, and J. K. Furdyna
Phys. Rev. B 78, 075309 – Published 7 August 2008

Abstract

The distribution of magnetic domain pinning fields was determined in ferromagnetic GaMnAs films using the angular dependence of the planar Hall effect. A major difference is found between the pinning field distribution in as-grown and in annealed films: the former showing a strikingly narrower distribution than the latter. This effect, which we ascribe to differences in the degree of uniformity of magnetic anisotropy, provides a better understanding of magnetic domain landscape in GaMnAs, a subject of current intense interest.

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  • Received 8 July 2008

DOI:https://doi.org/10.1103/PhysRevB.78.075309

©2008 American Physical Society

Authors & Affiliations

Jungtaek Kim, D. Y. Shin, and Sanghoon Lee*

  • Physics Department, Korea University, Seoul 136-701, Republic of Korea

X. Liu and J. K. Furdyna

  • Physics Department, University of Notre Dame, Notre Dame, Indiana 46556, USA

  • *slee3@korea.ac.kr

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Issue

Vol. 78, Iss. 7 — 15 August 2008

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