Abstract
Nonmetal-metal transitions are generally described by models which correlate the electronic transitions to structural changes. Here, we present a semiconductor-metal transition without structural changes. By combining scanning tunneling microscopy and high-resolution electron energy loss spectroscopy, we found that the band gap of two-dimensional (2D) Al islands grown on substrates decreases with increasing island size. We argue that this purely size dependent effect arises from the lateral confinement of free electrons in a 2D potential well formed by the islands.
- Received 12 October 2007
DOI:https://doi.org/10.1103/PhysRevB.76.235434
©2007 American Physical Society