Quantum size effects in the nonmetal to metal transition of two-dimensional Al islands

Ying Jiang, Kehui Wu, Jie Ma, Biao Wu, E. G. Wang, and Ph. Ebert
Phys. Rev. B 76, 235434 – Published 27 December 2007

Abstract

Nonmetal-metal transitions are generally described by models which correlate the electronic transitions to structural changes. Here, we present a semiconductor-metal transition without structural changes. By combining scanning tunneling microscopy and high-resolution electron energy loss spectroscopy, we found that the band gap of two-dimensional (2D) Al islands grown on Si(111)3×3Al substrates decreases with increasing island size. We argue that this purely size dependent effect arises from the lateral confinement of free electrons in a 2D potential well formed by the islands.

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  • Received 12 October 2007

DOI:https://doi.org/10.1103/PhysRevB.76.235434

©2007 American Physical Society

Authors & Affiliations

Ying Jiang1,2, Kehui Wu1, Jie Ma1, Biao Wu1, E. G. Wang1, and Ph. Ebert2

  • 1Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 2Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

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Issue

Vol. 76, Iss. 23 — 15 December 2007

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