Possibility of increased mobility in Ge-Sn alloy system

Jay Deep Sau and Marvin L. Cohen
Phys. Rev. B 75, 045208 – Published 23 January 2007

Abstract

We study the effect of strain and alloying with Sn on the band structure of Ge using a combination of ab initio and empirical pseudopotential techniques. The properties calculated are used to determine the phonon and alloy scattering contributions to the mobility. Using the dependence of the mobility on strain and alloying Sn, we propose a combination of alloying and biaxial strain to enhance both the electron and hole mobilities of Ge.

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  • Received 2 June 2006

DOI:https://doi.org/10.1103/PhysRevB.75.045208

©2007 American Physical Society

Authors & Affiliations

Jay Deep Sau* and Marvin L. Cohen

  • Department of Physics, University of California at Berkeley, and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

  • *Electronic address: jaydeep@socrates.berkeley.edu

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Issue

Vol. 75, Iss. 4 — 15 January 2007

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