Ab initio study of biphenyl chemisorption on Si(001): Configurational stability

M. Mamatkulov, L. Stauffer, C. Minot, and Ph. Sonnet
Phys. Rev. B 73, 035321 – Published 19 January 2006

Abstract

We present an ab initio energetical and structural study of the configurational stability of the biphenyl molecule adsorbed on the Si(001) surface. A number of models in biphenyl tight-bridge, butterfly, twisted, and tilted configurations are considered. For an undissociated biphenyl adsorption, the tight-bridge configuration is found to be the most stable one, slightly favored over the butterfly configuration. The effect on the stability of various parameters is investigated. The position with respect to the surface of the first phenyl ring atom (C1) on which the second ring is bound plays a determinant role. The tilted dimer under the second ring mainly acts in the biphenyl butterfly and tilted configurations, and a second ring location above a silicon down-atom favors stability. The effect of the second ring height above the surface is also discussed. Our results allow us to classify these different contributions by decreasing importance. By the hypothesis of a dissociative biphenyl adsorption, the calculated adsorption energies are clearly lower than in the corresponding undissociated model and the dissociated butterfly configuration is largely favored. Comparing our results to the experimental data, we propose some interpretations relative to the weakly and strongly chemisorbed biphenyl molecule observed in the scanning tunneling microscopy experiments.

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  • Received 25 October 2005

DOI:https://doi.org/10.1103/PhysRevB.73.035321

©2006 American Physical Society

Authors & Affiliations

M. Mamatkulov1, L. Stauffer1, C. Minot2, and Ph. Sonnet1,*

  • 1Laboratoire de Physique et de Spectroscopie Electronique, CNRS UMR 7014, Universite de Haute Alsace, 4 rue des frères Lumière, F-68093 Mulhouse Cedex, France
  • 2Laboratoire de Chimie Théorique UMR 7616 CNRS, Université Pierre et Marie Curie, 4 place Jussieu Paris 75252 cedex 05, France

  • *Corresponding author. FAX: +33-3-89-33-60-83. Electronic address: p.sonnet@uha.fr

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Vol. 73, Iss. 3 — 15 January 2006

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