Valence-band structure of InN from x-ray photoemission spectroscopy

L. F. J. Piper, T. D. Veal, P. H. Jefferson, C. F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, Hai Lu, and W. J. Schaff
Phys. Rev. B 72, 245319 – Published 14 December 2005

Abstract

The valence-band structure of clean, high-quality, single-crystalline wurtzite InN thin films prepared with atomic hydrogen is investigated using x-ray photoemission spectroscopy. The In4d52 semicore level due to the In-N bond is found to lie 16.0±0.1eV above the valence band maximum. Experimental valence-band spectra are compared with theoretical calculations of the valence-band density of states (VB-DOS), employing density functional theory within the local density approximation with quasiparticle and self-interaction corrections. Agreement between the experimental valence band spectrum and the theoretical VB-DOS is obtained.

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  • Received 23 June 2005

DOI:https://doi.org/10.1103/PhysRevB.72.245319

©2005 American Physical Society

Authors & Affiliations

L. F. J. Piper, T. D. Veal, P. H. Jefferson, and C. F. McConville*

  • Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom

F. Fuchs, J. Furthmüller, and F. Bechstedt

  • Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, Max-Wein-Platz 1, D-07743 Jena, Germany

Hai Lu and W. J. Schaff

  • Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

  • *Corresponding author. Electronic address: C.F.McConville@warwick.ac.uk

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Issue

Vol. 72, Iss. 24 — 15 December 2005

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