We present an analysis for two recent experiments in bulk strained semiconductors and show that a new, previously overlooked, strain spin-orbit coupling term may play a fundamental role. We propose simple experiments that could clarify the origin of strain-induced spin-orbit coupling terms in inversion asymmetric semiconductors. We predict that a uniform magnetization parallel to the electric field will be induced for specific directions of the applied electric field. We also propose special geometries to detect spin currents in strained semiconductors.

• Received 19 August 2004

DOI:https://doi.org/10.1103/PhysRevB.72.115204