Synchrotron x-ray studies of vitreous SiO2 over Si(001). II. Crystalline contribution

M. Castro-Colin, W. Donner, S. C. Moss, Z. Islam, S. K. Sinha, and R. Nemanich
Phys. Rev. B 71, 045311 – Published 13 January 2005

Abstract

Thermally oxidized thin films grown on Si(001) were analyzed with synchrotron x rays. By looking at crystal truncation rod (CTR) profiles we were able to observe, as have others, a crystalline peak, nominally along the (1 1 L) rod, together with Laue oscillations matching the film thickness. These oscillations are evidence of a crystalline component present throughout the entire film that vanishes away from the interface with the silicon substrate. A model consisting of distorted coesite is proposed to explain the results.

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  • Received 9 July 2004

DOI:https://doi.org/10.1103/PhysRevB.71.045311

©2005 American Physical Society

Authors & Affiliations

M. Castro-Colin1, W. Donner1, S. C. Moss1,2, Z. Islam3, S. K. Sinha4, and R. Nemanich5

  • 1Physics Department., University of Houston, Houston, Texas 77204-5005, USA
  • 2Texas Center for Superconductivity and Advanced Materials, University of Houston, Houston, Texas 77204, USA
  • 3Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 4Department of Physics, University of California San Diego, California 92093-0354, USA
  • 5Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, USA

See Also

Synchrotron x-ray studies of vitreous SiO2 over Si(001). I. Anisotropic glass contribution

M. Castro-Colin, W. Donner, S. C. Moss, Z. Islam, S. K. Sinha, R. Nemanich, H. T. Metzger, P. Bösecke, and T. Shülli
Phys. Rev. B 71, 045310 (2005)

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Vol. 71, Iss. 4 — 15 January 2005

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