Simulated scanning tunneling microscopy images of three-dimensional clusters: H8Si8O12 on Si(100)2×1

Yunqing Chen, Kevin S. Schneider, Mark M. Banaszak Holl, and B. G. Orr
Phys. Rev. B 70, 085402 – Published 5 August 2004

Abstract

A scanning tunneling microscopy (STM) simulation based on the Bardeen perturbation method is used to generate simulated images of two possible chemisorption modes, monovertex and cracked cluster, for H8Si8O12 on Si(100)2×1. The tip and sample are represented by cluster models, and electronic structure calculations are performed using density-functional theory. Simulated STM images are compared to experimental STM data acquired at nominally identical tunneling conditions. The simulated STM images elucidate the preferred monovertex attachment model, in addition to providing an understanding of the cluster features and apparent vertical and lateral dimensions observed in the experimental STM data.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 12 June 2003

DOI:https://doi.org/10.1103/PhysRevB.70.085402

©2004 American Physical Society

Authors & Affiliations

Yunqing Chen1, Kevin S. Schneider3, Mark M. Banaszak Holl2,3, and B. G. Orr1,2

  • 1Physics Department, Harrison M. Randall Laboratory, The University of Michigan, Ann Arbor, Michigan 48109-1120, USA
  • 2Applied Physics Program, Harrison M. Randall Laboratory, The University of Michigan, Ann Arbor, Michigan 48109-1120, USA
  • 3Chemistry Department, The University of Michigan, Ann Arbor, Michigan 48109-1055, USA

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 70, Iss. 8 — 15 August 2004

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×