We present detailed calculation of the positive acceptor ion $\left(A^{+}\right)$ and acceptor bound exciton $\left(A^{0}X\right)$ in Si, taking into account the valence-band anisotropy, dynamic Jahn-Teller effect, and particle correlation. We show that the inverted splitting ordering of acceptor bound exciton states can be accounted for by electron-hole correlation, when the hole-hole Coulomb repulsion is compensated for by the dynamic Jahn-Teller effect.

• Received 15 January 2004

DOI:https://doi.org/10.1103/PhysRevB.69.245206