Hyperfine interactions at dangling bonds in amorphous germanium

T. Graf, T. Ishikawa, K. M. Itoh, E. E. Haller, M. Stutzmann, and M. S. Brandt
Phys. Rev. B 68, 205208 – Published 20 November 2003
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Abstract

Isotope-engineered amorphous germanium (a-Ge) films with 73Ge concentrations in the range of 0.1 to 95.6 % have been investigated by electron spin resonance (ESR) and electrically detected magnetic resonance (EDMR) at microwave frequencies between 0.434 and 9.35 GHz. The hyperfine interactions of dangling bond (DB) defects with many 73Ge nuclei and their spin localization radius have been extracted from the broadening of the EDMR signals in isotope enriched samples at different 73Ge concentrations. Linewidths as low as ΔBppexp=2.6G have been observed at 0.434 GHz in a sample without 73Ge nuclear spins. At low73Ge concentrations, the frequency-dependent linewidth BppSO/ν=4.4G/GHz is determined by g-factor anisotropy and disorder. A frequency-independent linewidth contribution of about 1 G is attributed to dipolar broadening between the DB electronic spins. Over a large range of intermediate concentrations, the statistically distributed nuclear spins of 73Ge atoms on sites close to the DB defect atom are responsible for the overall linewidth. The large linewidth ΔBppexp=300G of samples with 73Ge concentrations of 95.6% requires a model wave function with a Fermi contact interaction of Aiso=29G×gμB at the defect atom, indicating that a fraction of 3.4% of the DB wave function originates from s-like orbitals there. The decay of the rest of the DB wave function can be described with a spin localization radius of 3.5 Å by a numerical model for the statistical hyperfine broadening. The delocalization of the DB spin is much smaller than that of the DB charge density determined in transport measurements.

  • Received 28 June 2003

DOI:https://doi.org/10.1103/PhysRevB.68.205208

©2003 American Physical Society

Authors & Affiliations

T. Graf1,*, T. Ishikawa2, K. M. Itoh2,3, E. E. Haller4, M. Stutzmann1, and M. S. Brandt1

  • 1Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
  • 2Department of Applied Physics, Keio University, Yokohama 223-8522, Japan
  • 3JST-CREST, Kawaguchi, 332-0012, Japan
  • 4Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA

  • *Electronic address: tobias.graf@wsi.tum.de

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Vol. 68, Iss. 20 — 15 November 2003

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