Stress-induced defects in Sb2Te3

T. Thonhauser, Gun Sang Jeon, G. D. Mahan, and J. O. Sofo
Phys. Rev. B 68, 205207 – Published 18 November 2003
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Abstract

We present first-principles calculations for stress-induced defects in the thermoelectric material Sb2Te3. We focused on the antisite defect, vacancies, and combinations thereof. Our calculated formation energies are in good agreement with experimentally obtained data. We also studied the effect of hydrostatic pressure and uniaxial stress on these formation energies. Both hydrostatic pressure and uniaxial stress are found to lower the formation energies of the antisite defects, suggesting a structural transition at high pressures. The relation to experiments is also discussed.

  • Received 15 July 2003

DOI:https://doi.org/10.1103/PhysRevB.68.205207

©2003 American Physical Society

Authors & Affiliations

T. Thonhauser1, Gun Sang Jeon1, G. D. Mahan1,2, and J. O. Sofo1,2

  • 1Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USA
  • 2Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA

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Vol. 68, Iss. 20 — 15 November 2003

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