Transition from band insulator to Mott insulator in one dimension:  Critical behavior and phase diagram

Jizhong Lou, Shaojin Qin, Tao Xiang, Changfeng Chen, Guang-Shan Tian, and Zhaobin Su
Phys. Rev. B 68, 045110 – Published 25 July 2003
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Abstract

We report a systematic study of the transition from a band insulator (BI) to a Mott insulator (MI) in a one-dimensional Hubbard model at half-filling with an on-site Coulomb interaction U and an alternating periodic site potential V. We employ both the zero-temperature density matrix renormalization group (DMRG) method to determine the gap and critical behavior of the system and the finite-temperature transfer matrix renormalization group method to evaluate the thermodynamic properties. We find two critical points at U=Uc and U=Us that separate the BI and MI phases for a given V. A charge-neutral spin-singlet exciton band develops in the BI phase (U<Uc) and drops below the band gap when U exceeds a special point Ue. The exciton gap closes at the first critical point Uc while the charge and spin gaps persist and coincide between Uc<U<Us where the system is dimerized. Both the charge and spin gaps collapse at U=Us when the transition to the MI phase occurs. In the MI phase (U>Us) the charge gap increases almost linearly with U while the spin gap remains zero. These findings clarify earlier published results on the same model, and offer insights into several important issues regarding an appropriate scaling analysis of DMRG data and a full physical picture of the delicate nature of the phase transitions driven by electron correlation. The present work provides a comprehensive understanding for the critical behavior and phase diagram for the transition from BI to MI in one-dimensional correlated electron systems with a periodic alternating site potential.

  • Received 28 August 2002

DOI:https://doi.org/10.1103/PhysRevB.68.045110

©2003 American Physical Society

Authors & Affiliations

Jizhong Lou1,2, Shaojin Qin1,3, Tao Xiang1, Changfeng Chen2, Guang-Shan Tian4, and Zhaobin Su1

  • 1Institute of Theoretical Physics, P. O. Box 2735, Beijing 100080, China
  • 2Department of Physics, University of Nevada, Las Vegas, Nevada 89154, USA
  • 3Department of Physics, Kyushu University, Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan
  • 4Department of Physics, Peking University, Beijing 100087, China

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Vol. 68, Iss. 4 — 15 July 2003

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