Charge transport through small silicon clusters

Christopher Roland, Vincent Meunier, Brian Larade, and Hong Guo
Phys. Rev. B 66, 035332 – Published 29 July 2002
PDFExport Citation

Abstract

With a recently developed ab initio nonequilibrium Green’s-function formalism, we have investigated the transport behavior of small Sin, n=110, 13, and 20 nanoclusters between atomistic Al and Au leads. All of the clusters display metallic IV characteristics, with typical conductances ranging between two and three (units of Go=2e2/h). The transport properties of these cluster junctions may be understood in terms of both the band structure of the electrodes, and the molecular electronic states of the clusters as modified by the lead environment. In addition, the quantum transport properties of Si nanoclusters doped with a Na atom are also analyzed.

  • Received 18 December 2001

DOI:https://doi.org/10.1103/PhysRevB.66.035332

©2002 American Physical Society

Authors & Affiliations

Christopher Roland1, Vincent Meunier1, Brian Larade2, and Hong Guo2

  • 1Department of Physics, The North Carolina State University, Raleigh, North Carolina 27695
  • 2Center for the Physics of Materials and Department of Physics, McGill University, Montreal, PQ, Canada H3A 2T8

References (Subscription Required)

Click to Expand
Issue

Vol. 66, Iss. 3 — 15 July 2002

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×