Bias-voltage-induced phase transition in bilayer quantum Hall ferromagnets

Yogesh N. Joglekar and Allan H. MacDonald
Phys. Rev. B 65, 235319 – Published 11 June 2002
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Abstract

We consider bilayer quantum Hall systems at total filling factor ν=1 in presence of a bias voltage Δv that leads to different filling factors in each layer. We use auxiliary field functional-integral approach to study mean-field solutions and collective excitations around them. We find that at large layer separation, the collective excitations soften at a finite wave vector leading to the collapse of quasiparticle gap. Our calculations predict that as the bias voltage is increased, bilayer systems undergo a phase transition from a compressible state to a ν=1 phase-coherent state with charge imbalance. We present simple analytical expressions for bias-dependent renormalized charge imbalance and pseudospin stiffness that are sensitive to the softening of collective modes.

  • Received 4 November 2001

DOI:https://doi.org/10.1103/PhysRevB.65.235319

©2002 American Physical Society

Authors & Affiliations

Yogesh N. Joglekar and Allan H. MacDonald

  • Department of Physics, University of Texas at Austin, Austin, Texas 78712
  • Department of Physics, Indiana University, Bloomington, Indiana 47405

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Issue

Vol. 65, Iss. 23 — 15 June 2002

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