Spin-polarized Zener tunneling in (Ga,Mn)As

E. Johnston-Halperin; D. Lofgreen; R. K. Kawakami; D. K. Young; L. Coldren; A. C. Gossard; D. D. Awschalom

doi:10.1103/PhysRevB.65.041306

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Spin-polarized Zener tunneling in (Ga,Mn)As

E. Johnston-Halperin, D. Lofgreen, R. K. Kawakami, D. K. Young, L. Coldren, A. C. Gossard, and D. D. Awschalom

Phys. Rev. B 65, 041306(R) – Published 3 January 2002

Abstract

We investigate spin-polarized inter-band tunneling through measurement of a (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to the conduction band of an adjacent n-GaAs layer. The resulting current is monitored by injection into a quantum well light emitting diode whose electroluminescence polarization is found to track the magnetization of the (Ga,Mn)As layer as a function of both temperature and magnetic field.

Received 20 September 2001

DOI:https://doi.org/10.1103/PhysRevB.65.041306

Authors & Affiliations

E. Johnston-Halperin¹, D. Lofgreen², R. K. Kawakami¹, D. K. Young^1,2, L. Coldren², A. C. Gossard^2,3, and D. D. Awschalom¹

¹Department of Physics, University of California, Santa Barbara, California 93106
²Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
³Materials Science Department, University of California, Santa Barbara, California 93106

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Vol. 65, Iss. 4 — 15 January 2002

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