Phys. Rev. B 64, 115306 (2001) - Electronic structure of ultrathin Ge layers buried in Si(100)

Electronic structure of ultrathin Ge layers buried in Si(100)

P. O. Nilsson, S. Mankefors, J. Guo, J. Nordgren, D. Debowska-Nilsson, W.-X. Ni, and G. V. Hansson

Phys. Rev. B 64, 115306 – Published 24 August 2001

Abstract

Ultrathin Ge wetting layers, buried in Si(100), have been investigated by soft x-ray emission spectroscopy. With the assistance of ab initio density functional theory calculations the electronic structure of the layers could be established. In particular Si bulk states, splitted and resonating in the Ge layers, were identified.

Received 5 March 2001

DOI:https://doi.org/10.1103/PhysRevB.64.115306

©2001 American Physical Society

Authors & Affiliations

Department of Physics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden

Department of Informatics and Mathematics, University of Trollhättan/Uddevalla, Box 957, SE-461 29 Trollhättan, Sweden

J. Guo and J. Nordgren

Physics Department, Uppsala University, Box 530, SE-751 21 Uppsala, Sweden

D. Debowska-Nilsson

Institute of Physics, Jagellonian University, ul. Reymonta 4, PL-30-059 Krakow, Poland

W.-X. Ni and G. V. Hansson

Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden

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Vol. 64, Iss. 11 — 15 September 2001

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