Dimer of substitutional carbon in silicon studied by EPR and ab initio methods

J. R. Byberg, B. Bech Nielsen, M. Fanciulli, S. K. Estreicher, and P. A. Fedders
Phys. Rev. B 61, 12939 – Published 15 May 2000
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Abstract

An EPR signal observed in carbon-doped float-zone silicon after irradiation with 2-MeV electrons at room temperature has been investigated. It represents a defect with S=12, an apparently isotropic g factor (=2.0030), and a complicated hyperfine structure from 29Si nuclei in five shells that are consistent with an overall trigonal symmetry. Subtle asymmetries of the hyperfine pattern indicate the presence of a small trigonal component of the g tensor as well. An additional pair of satellite lines is identified by the relative intensity (1%) as arising from 13C in natural abundance, occupying two equivalent sites on the trigonal axis. Several defect structures that contain two equivalent carbon atoms on a trigonal axis were investigated by ab initio Hartree-Fock calculations. Only the negative charge state of a dicarbon center CsCs, in which the carbon atoms occupy adjacent substitutional sites, was found to be consistent with the EPR data.

  • Received 31 August 1999

DOI:https://doi.org/10.1103/PhysRevB.61.12939

©2000 American Physical Society

Authors & Affiliations

J. R. Byberg

  • Institute of Chemistry, University of Aarhus, DK-8000, Denmark

B. Bech Nielsen and M. Fanciulli*

  • Institute of Physics and Astronomy, University of Aarhus, DK-8000, Denmark

S. K. Estreicher

  • Department of Physics, Texas Tech University, Lubbock, Texas 79409-1051

P. A. Fedders

  • Department of Physics, Washington University, St. Louis, Missouri 63130-1105

  • *Present address: Laboratorio MDM-INFM, Agrate Brianza (MI), I-20041, Italy.

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Vol. 61, Iss. 19 — 15 May 2000

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