Importance of the spin-orbit split-off band on the tunneling properties of holes through AlxGa1xAs/GaAs and InP/InyGa1yAs heterostructures

S. Ekbote, M. Cahay, and K. Roenker
Phys. Rev. B 58, 16315 – Published 15 December 1998
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Abstract

The influence of the spin-orbit split-off band on the tunneling of holes across heterostructures is studied starting with the 6×6 Luttinger-Kohn Hamiltonian. The latter is diagonalized into 3×3 blocks (upper and lower Hamiltonians) using a unitary transformation. We consider AlxGa1xAs/GaAs and InP/InyGa1yAs material systems, and study the tunneling of holes through a one-dimensional δ scatterer and across abrupt potential steps. In each case, we show that the presence of the spin-orbit split-off band has a profound influence on the transmission coefficients of holes, even for holes with energy much lower than the threshold for free propagation in the spin-orbit split-off band. For the potential steps, we show that the results can be quite different with upper and lower Hamiltonians. Furthermore, we stress the importance of the spin-orbit split-off band by comparing the results with those obtained with the 4×4 Luttinger-Kohn Hamiltonian which neglects the importance of the spin-orbit split-off band.

  • Received 3 November 1997

DOI:https://doi.org/10.1103/PhysRevB.58.16315

©1998 American Physical Society

Authors & Affiliations

S. Ekbote, M. Cahay, and K. Roenker

  • Department of Electrical Engineering, University of Cincinnati, Cincinnati, Ohio 45221

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Vol. 58, Iss. 24 — 15 December 1998

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